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Proceedings Paper

Performance of InAs-based infrared photodiodes
Author(s): V. V. Tetyorkin; A. V. Sukach; S. V. Stary; N. V. Zotova; S. A. Karandashev; B. A. Matveev; M. A. Remennyi; N. M. Stus'
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Paper Abstract

The performance of infrared InAs homojunction and heterojunction photodiodes (PD) and possibilities of its improvement are analyzed both theoretically and experimentally. The figures of merit such as the resistance-area product R0A, the carrier lifetime and the quantum efficiency are studied. The excess carrier lifetime in InAs are calculated for radiative and Auger recombination mechanisms using three- and four-band Kane model. Theoretical limit of threshold parameters in InAs-based photodiodes is calculated for intrinsic (radiative and Auger) recombination processes. The diffused PD were prepared by short-term cadmium diffusion into substrates with n-type conductivity. In the investigated PD the total dark current is determined by the diffusion carrier transport mechanism at room temperature. Experimentally proved that heterojunction PD p+-InAsSbP/n-InAs can be more effective as sensitive element in gas sensors operated at room temperature in comparison with commercially available PD. Experimentally proved that heterojunction PD p+-InAsSbP/n-InAs can be more effective as sensitive element in gas sensors operated at room temperature in comparison with commercially available PD. Their threshold parameters (current sensitivity and detectivity) have approximately the same values as in commercially available photodiodes, but they have higher values of the resistance-area product.

Paper Details

Date Published: 16 May 2007
PDF: 10 pages
Proc. SPIE 6585, Optical Sensing Technology and Applications, 658520 (16 May 2007); doi: 10.1117/12.723016
Show Author Affiliations
V. V. Tetyorkin, V. Lashkaryev Institute of Semiconductor Physics (Ukraine)
A. V. Sukach, V. Lashkaryev Institute of Semiconductor Physics (Ukraine)
S. V. Stary, V. Lashkaryev Institute of Semiconductor Physics (Ukraine)
N. V. Zotova, IOFFE Physico-Technical Institute (Russia)
S. A. Karandashev, IOFFE Physico-Technical Institute (Russia)
B. A. Matveev, IOFFE Physico-Technical Institute (Russia)
M. A. Remennyi, IOFFE Physico-Technical Institute (Russia)
N. M. Stus', IOFFE Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 6585:
Optical Sensing Technology and Applications
Francesco Baldini; Jiri Homola; Robert A. Lieberman; Miroslav Miler, Editor(s)

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