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Proceedings Paper

InAs and InAs(Sb)(P) (3-5 microns) immersion lens photodiodes for portable optic sensors
Author(s): M. A. Remennyy; B. A. Matveev; N. V. Zotova; S. A. Karandashev; N. M. Stus; N. D. Ilinskaya
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Paper Abstract

InAs and InAs(Sb)(P) based heterostructures with InAsSbP claddings grown onto heavily doped or undoped n-InAs substrates have been processed into 230÷430 &mgr;m wide mesa flip-chip devices operating in the 3÷5 &mgr;m spectral range. We present temperature dependence of I-V, RoA, SI and D* as well as the dependence on a photon energy in uncoated backside illuminated and equipped with an immersion lens photodiodes respectively. Room temperature D*&lgr; as high as (1.75x1011÷3x108) cmHz1/2W-1 was achieved in photodiodes with Si lens having effective diameter of 3.3 mm and operating in the 3÷5 &mgr;m range correspondingly.

Paper Details

Date Published: 1 May 2007
PDF: 8 pages
Proc. SPIE 6585, Optical Sensing Technology and Applications, 658504 (1 May 2007); doi: 10.1117/12.722847
Show Author Affiliations
M. A. Remennyy, Ioffe Physico-Technical Institute (Russia)
B. A. Matveev, Ioffe Physico-Technical Institute (Russia)
N. V. Zotova, Ioffe Physico-Technical Institute (Russia)
S. A. Karandashev, Ioffe Physico-Technical Institute (Russia)
N. M. Stus, Ioffe Physico-Technical Institute (Russia)
N. D. Ilinskaya, Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 6585:
Optical Sensing Technology and Applications
Francesco Baldini; Jiri Homola; Robert A. Lieberman; Miroslav Miler, Editor(s)

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