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Proceedings Paper

Semiconductor photon counter with nanosecond gating capability
Author(s): Lukas Kral; Ivan Prochazka; Karel Hamal
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Paper Abstract

Single photon avalanche diodes (SPADs) based on various semiconductors have been developed at the Czech Technical University in Prague during the last 20 years. Much attention has been also paid to development of high-speed active quenching circuits for these detectors. Recently, we have performed a series of experiments to characterize our silicon-based photon counters and their capability of operation in a gated mode with the gate duration of single nanoseconds and the detector sensitivity rise time of hundreds of picoseconds. This performance has been achieved by optimizing the active quenching circuit and its components. The fast gating is needed in cases, when the photons of interest are generated short time after a strong optical signal, which cannot be suppressed in optical domain. The time dependence of detection sensitivity, detection delay and timing resolution within the nanosecond gates has been measured.

Paper Details

Date Published: 11 May 2007
PDF: 6 pages
Proc. SPIE 6583, Photon Counting Applications, Quantum Optics, and Quantum Cryptography, 658310 (11 May 2007); doi: 10.1117/12.722825
Show Author Affiliations
Lukas Kral, Czech Technical Univ. in Prague (Czech Republic)
Ivan Prochazka, Czech Technical Univ. in Prague (Czech Republic)
Karel Hamal, Czech Technical Univ. in Prague (Czech Republic)

Published in SPIE Proceedings Vol. 6583:
Photon Counting Applications, Quantum Optics, and Quantum Cryptography
Miloslav Dusek; Ivan Prochazka; Mark S. Hillery; Alan L. Migdall; Wolfgang P. Schleich; Alexandre Pauchard, Editor(s)

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