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Proceedings Paper

Optical characterization of InGaN/GaN multiple quantum well structures grown by metalorganic chemical vapor deposition
Author(s): Yan-Kuin Su; An-Ting Cheng; Wei-Chi Lai
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Paper Abstract

Optical and crystal properties of InGaN/GaN multiple quantum well (MQW) structures grown by metalorganic chemical vapor deposition (MOCVD) were characterized using room-temperature photoluminescence (PL) and high-resolution Xray diffraction (HRXRD), respectively. The near bandgap excitonic peak decreased from 2.77 eV to 2.68 eV while there was a 10 Å increase in the well thickness, probably caused by variations of quantized energy levels. In addition, higher growth temperature of MQW structures had a small influence on the pair thickness, but the emission wavelength showed a blueshift attributed to the decrease in average of indium mole fraction. However, the near bandgap excitonic peak remained constant for the thicker quantum barriers. For the PL emission intensity of InGaN/GaN MQW structures, it was enhanced with a thinner quantum well width and a thicker quantum barrier, which could be resulted from the improvement of optical confinement in the quantum well. Moreover, by using the higher growth temperature, enhanced PL intensity was achieved due to the improvement of structure quality for the InGaN/GaN heterostructure. Therefore, these results suggest that the emission wavelength and intensity of the InGaN/GaN MQW-based optical device could be modulated by designing thicknesses of quantum wells as well as growth temperatures of MQW structures.

Paper Details

Date Published: 11 May 2007
PDF: 7 pages
Proc. SPIE 6583, Photon Counting Applications, Quantum Optics, and Quantum Cryptography, 658311 (11 May 2007); doi: 10.1117/12.722693
Show Author Affiliations
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
An-Ting Cheng, National Cheng Kung Univ. (Taiwan)
Wei-Chi Lai, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 6583:
Photon Counting Applications, Quantum Optics, and Quantum Cryptography
Miloslav Dusek; Mark S. Hillery; Wolfgang P. Schleich; Ivan Prochazka; Alan L. Migdall; Alexandre Pauchard, Editor(s)

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