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Proceedings Paper

Ultrafast spectroscopy of semiconductor Bragg reflectors
Author(s): M. V. Ermolenko; S. A. Tikhomirov; V. V. Stankevich; O. V. Buganov; S. V. Gaponenko; P. I. Kuznetsov; G. G. Yakuscheva
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Paper Abstract

ZnS/ZnSe Bragg reflectors under condition of ZnSe interband excitation by a femtosecond laser pulse exhibit strong narrow-band modification of absorption and wide-band modification of reflection. Mean decay time for nonlinear reflection in heterostructures ranges from 2 to 3 ps whereas in bare ZnSe monolayer it exceeds 5 ps. Possible underlying physical processes responsible for nonlinear refraction in the transparency region include interplay of absorption driven nonlinear refraction via Kramers-Kronig relations and intrinsic dielectric properties of dense electron-hole plasma. For nonlinear absorption at ZnSe band edge, interplay of plasma screening effects and states filling effects are relevant.

Paper Details

Date Published: 8 May 2007
PDF: 5 pages
Proc. SPIE 6582, Nonlinear Optics and Applications II, 65821H (8 May 2007); doi: 10.1117/12.722688
Show Author Affiliations
M. V. Ermolenko, Institute of Molecular and Atomic Physics (Belarus)
S. A. Tikhomirov, Institute of Molecular and Atomic Physics (Belarus)
V. V. Stankevich, Institute of Molecular and Atomic Physics (Belarus)
O. V. Buganov, Institute of Molecular and Atomic Physics (Belarus)
S. V. Gaponenko, Institute of Molecular and Atomic Physics (Belarus)
P. I. Kuznetsov, Institute of Radioengineering and Electronics (Russia)
G. G. Yakuscheva, Institute of Radioengineering and Electronics (Russia)


Published in SPIE Proceedings Vol. 6582:
Nonlinear Optics and Applications II
Mario Bertolotti, Editor(s)

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