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Proceedings Paper

Four-wave mixing in intersubband transitions of a semiconductor quantum well structure
Author(s): Emmanuel Paspalakis; Aggeliki Kanaki; Andreas F. Terzis
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Paper Abstract

We study theoretically the phenomenon of four-wave mixing in intersubband transitions of a symmetric double quantum well structure. In the theoretical model we consider two quantum well subbands that are coupled by a strong pump electromagnetic field and a weak probe electromagnetic field, taking into account the effects of electron-electron interactions. For the description of the system dynamics we use the density matrix equations obtained from the effective nonlinear Bloch equations. These equations are solved numerically for a realistic semiconductor quantum well structure GaAs/AlGaAs. We show that the four-wave mixing spectrum can be significantly dependent on the frequency and the intensity of the pump field and on electron sheet density.

Paper Details

Date Published: 8 May 2007
PDF: 9 pages
Proc. SPIE 6582, Nonlinear Optics and Applications II, 65821N (8 May 2007); doi: 10.1117/12.722187
Show Author Affiliations
Emmanuel Paspalakis, Univ. of Patras (Greece)
Aggeliki Kanaki, Univ. of Patras (Greece)
Andreas F. Terzis, Univ. of Patras (Greece)

Published in SPIE Proceedings Vol. 6582:
Nonlinear Optics and Applications II
Mario Bertolotti, Editor(s)

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