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Proceedings Paper

Performances of RCE photodetectors based on the internal photoemission effect
Author(s): M. Casalino; L. Sirleto; L. Moretti; F. Della Corte; I. Rendina
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Paper Abstract

In this paper, a methodology for the analysis of a resonant cavity enhanced (RCE) photodetector, based on internal photoemission effect and working at 1.55 &mgr;m, is reported. In order to quantify the performance of photodetector, quantum efficiency including the image force effect, bandwidth and dark current as a function of bias voltage are calculated. We propose a comparison among three different Schottky barrier Silicon photodetectors, having as metal layers gold, silver or copper respectively. We obtain that the highest efficiency (0.2%) but also the highest dark current is obtained with metal having the lowest barrier, while for all devices, values of order of 100GHz and 100MHz were obtained, respectively, for the carrier-transit time limited 3-dB bandwidth and bandwidth-efficiency.

Paper Details

Date Published: 12 June 2007
PDF: 8 pages
Proc. SPIE 6593, Photonic Materials, Devices, and Applications II, 659329 (12 June 2007); doi: 10.1117/12.722131
Show Author Affiliations
M. Casalino, Univ. degli Studi Mediterranea di Reggio Calabria (Italy)
Isituto per la Microelettronica e Microsistemi, CNR (Italy)
L. Sirleto, Isituto per la Microelettronica e Microsistemi, CNR (Italy)
L. Moretti, Univ. degli Studi Mediterranea di Reggio Calabria (Italy)
F. Della Corte, Univ. degli Studi Mediterranea di Reggio Calabria (Italy)
I. Rendina, Isituto per la Microelettronica e Microsistemi, CNR (Italy)


Published in SPIE Proceedings Vol. 6593:
Photonic Materials, Devices, and Applications II
Ali Serpengüzel; Gonçal Badenes; Giancarlo C. Righini, Editor(s)

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