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Proceedings Paper

Physical modeling of a highly sensitive linear MOS sensor for 2D detection of magnetic fields
Author(s): Ali Abou-Elnour; Ossama Abo-Elnor; Mohamed Y. Essam; M. Marzouk Ibrahim
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Paper Abstract

In the present work, a rigorous two-dimensional physical simulator is developed to characterize the operation and to optimize the structure of a highly sensitive linear 2D MOSFET magnetic sensor. The magnetic field equation and the carrier transport equations are efficiently coupled and accurately solved to determine the effects of external applied magnetic field on the electrical characteristics of the MOSFET based sensor. The accuracy of the present simulator is tested for different device and circuit parameters to allow the use of it as an efficient CAD tool to fully characterize smart two-directions MOSFET magnetic sensor.

Paper Details

Date Published: 31 May 2007
PDF: 11 pages
Proc. SPIE 6589, Smart Sensors, Actuators, and MEMS III, 65891P (31 May 2007); doi: 10.1117/12.722107
Show Author Affiliations
Ali Abou-Elnour, Ajman Univ. of Science & Technology (United Arab Emirates)
Ossama Abo-Elnor, Ajman Univ. of Science & Technology (United Arab Emirates)
Mohamed Y. Essam, Omm Al-Qura Univ. (Saudi Arabia)
M. Marzouk Ibrahim, Ain-Shams Univ. (Egypt)


Published in SPIE Proceedings Vol. 6589:
Smart Sensors, Actuators, and MEMS III
Thomas Becker; Carles Cané; N. Scott Barker, Editor(s)

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