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Proceedings Paper

Germanium as an integrated resistor material in RF MEMS switches
Author(s): K. Grenier; C. Bordas; S. Pinaud; L. Salvagnac; D. Dubuc
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Paper Abstract

This paper introduces the use of germanium as resistive material in RF MicroElectroMechanical (MEMS) devices. Integrated resistors are indeed highly required into RF MEMS switches, in order to prevent any RF signal leakage in the bias lines and also to be compatible with ICs. Germanium material presents strong advantages compared to others. It is widely used in microtechnologies, notably as an important semi-conductor in SiGe transistors as well as sacrificial or structural layers and also mask layer in various processes (Si micromachining especially). But it also presents a great electrical characteristic with a very high resistivity value. This property is particularly interesting for the elaboration of integrated resistors for RF components as it assures miniaturised resistors in total agreement with electromagnetic requirements. Its compatibility as resistive material in MEMS has been carried out. Its integration in the entire MEMS process has been fruitfully achieved and led to the successful demonstration and validation of integrated Ge resistors into serial RF MEMS variable capacitors, without any RF perturbations.

Paper Details

Date Published: 17 May 2007
PDF: 9 pages
Proc. SPIE 6589, Smart Sensors, Actuators, and MEMS III, 65890X (17 May 2007); doi: 10.1117/12.722039
Show Author Affiliations
K. Grenier, LAAS-CNRS, Univ. de Toulouse (France)
C. Bordas, LAAS-CNRS, Univ. de Toulouse (France)
S. Pinaud, LAAS-CNRS, Univ. de Toulouse (France)
L. Salvagnac, LAAS-CNRS, Univ. de Toulouse (France)
D. Dubuc, LAAS-CNRS, Univ. de Toulouse (France)


Published in SPIE Proceedings Vol. 6589:
Smart Sensors, Actuators, and MEMS III
Thomas Becker; Carles Cané; N. Scott Barker, Editor(s)

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