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Proceedings Paper

Design and development of a microheater on GaAs for MEMS gas sensor array
Author(s): Ivan Hotovy; Vlastimil Rehacek; Tibor Lalinsky; Stefan Hascik; Fedor Mika
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Paper Abstract

This work describes the design, simulation, fabrication and characterization of a TiN/Pt microheater prepared on GaAs micromechanical structure as a prospective device for MEMS gas sensor array. We use the electro-thermal simulation to verify the properties of the designed microstructure, which conformed achievement of the operating temperatures in the range of 200 to 320°C with heating power less than 25 mW. The average temperature gradient in the active area does not exceed 0.6 K/μm. We demonstrated the fabrication of GaAs suspended membranes, realized in two steps, by combination of surface and bulk micromachining. We also describe the development and characterization of a microheater on a GaAs membrane. The power consumption at an operating temperature of approximately 550 K is about 30 mW and the achieved thermal resistance value is 8.43 K/mW.

Paper Details

Date Published: 17 May 2007
PDF: 8 pages
Proc. SPIE 6589, Smart Sensors, Actuators, and MEMS III, 658918 (17 May 2007); doi: 10.1117/12.721938
Show Author Affiliations
Ivan Hotovy, Slovak Univ. of Technology (Slovak Republic)
Vlastimil Rehacek, Slovak Univ. of Technology (Slovak Republic)
Tibor Lalinsky, Institute of Electrical Engineering (Slovak Republic)
Stefan Hascik, Institute of Electrical Engineering (Slovak Republic)
Fedor Mika, Slovak Univ. of Technology (Slovak Republic)


Published in SPIE Proceedings Vol. 6589:
Smart Sensors, Actuators, and MEMS III
Thomas Becker; Carles Cané; N. Scott Barker, Editor(s)

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