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Proceedings Paper

Fast carrier dynamics in novel GaAs deep-centers for high-efficiency light-emitters for 1.3um-1.5um fiber optics
Author(s): Janet L. Pan
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Paper Abstract

We demonstrate the first LEDs at 1.3-1.5um using GaAs deep-centers having higher (90%) efficiencies and larger Einstein B-coefficients than bulk InGaAs. An observed absence of deep-center self-absorption (from a Franck-Condon shift) could make possible near-zero threshold lasers. The fast capture (15- 40fs) of free holes by deep-centers, as well as the Einstein B-coefficient, are deduced from a combination of photoluminescence and electroluminescence measurements.

Paper Details

Date Published: 8 February 2007
PDF: 3 pages
Proc. SPIE 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, 64710D (8 February 2007); doi: 10.1117/12.721464
Show Author Affiliations
Janet L. Pan, Yale Univ. (United States)


Published in SPIE Proceedings Vol. 6471:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV
Marshall J. Cohen; Joseph P. Estrera; Kong-Thon Tsen; Jin-Joo Song, Editor(s)

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