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Proceedings Paper

Metrology challenges of double exposure and double patterning
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Paper Abstract

Double patterning has emerged as a likely lithography technology to bridge the gap between water-based ArF immersion lithography and EUV. Water immersion, single exposure lithography is limited to about 40nm half pitch with NA 1.35. Extension of immersion with high index fluids and glasses is theoretically possible, but faces severe challenges in technology, economics, and timing. In order to extend water immersion lithography further, much attention is given to reducing effective k1 to less than 0.25 using double patterning. This paper explores the unique challenges IC metrology faces to enable double patterning, first in development, then in production.

Paper Details

Date Published: 4 April 2007
PDF: 13 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 651802 (4 April 2007); doi: 10.1117/12.721459
Show Author Affiliations
William H. Arnold, ASML Technology Development Ctr. (United States)
Mircea Dusa, ASML Technology Development Ctr. (United States)
Jo Flinders, ASML Holding, B. V. (Netherlands)


Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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