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Proceedings Paper

MBE grown type-II superlattice photodiodes for MWIR and LWIR imaging applications
Author(s): Cory J. Hill; Jian V. Li; Jason M. Mumolo; Sarath D. Gunapala; David R. Rhiger; Robert E. Kvaas; Sean F. Harris
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Paper Abstract

We report on the status of GaSb/InAs type-II superlattice diodes grown by molecular beam epitaxy (MBE) and designed for infrared absorption in the 2-5μm and 8-12&mgr;m bands. Recent LWIR devices have produced detectivities as high as 8x1010 Jones with a differential resistance-area product greater than 6 Ohmcm2 at 80K with a long wavelength cutoff of approximately 12&mgr;m. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11μm range. MWIR devices have produced detectivities as high as 8x1013 Jones with a differential resistance-area product greater than 3x107 Ohmcm2 at 80K with a long wavelength cutoff of approximately 3.7μm. The measured quantum efficiency of these front-side illuminated MWIR devices is close to 40% in the 2-3μm range at low temperature and increases to over 60% near room temperature. Initial results on SiO2 and epitaxial-regrowth based passivation techniques are also presented.

Paper Details

Date Published: 14 May 2007
PDF: 10 pages
Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 654205 (14 May 2007); doi: 10.1117/12.721330
Show Author Affiliations
Cory J. Hill, Jet Propulsion Lab. (United States)
Jian V. Li, Jet Propulsion Lab. (United States)
Jason M. Mumolo, Jet Propulsion Lab. (United States)
Sarath D. Gunapala, Jet Propulsion Lab. (United States)
David R. Rhiger, Raytheon Vision Systems (United States)
Robert E. Kvaas, Raytheon Vision Systems (United States)
Sean F. Harris, Raytheon Vision Systems (United States)


Published in SPIE Proceedings Vol. 6542:
Infrared Technology and Applications XXXIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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