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Proceedings Paper

Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy
Author(s): V. M. Smirnov; P. J. Batty; A. Krier; R. Jones; V. I. Vasil'ev; G. S. Gagis; V. I. Kuchinskii
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Paper Abstract

GaInAsPSb is a new narrow gap semiconductor material, which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Unique physical properties of the alloy are discussed and its advantages for mid-infrared optoelectronic devices are considered. Liquid phase epitaxy (LPE) growth conditions for GaInAsPSb homogeneous high crystal quality layers lattice-matched onto GaSb substrates were determined. Spectra of photoluminescence (PL) emission were investigated. Homojunction p-i-n light-emitting diodes (LEDs) based on this pentenary alloy were fabricated and electroluminescence (EL) peaking near 4.0 μm at room temperature was observed.

Paper Details

Date Published: 3 February 2007
PDF: 8 pages
Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 647918 (3 February 2007); doi: 10.1117/12.721327
Show Author Affiliations
V. M. Smirnov, Lancaster Univ. (United Kingdom)
P. J. Batty, Lancaster Univ. (United Kingdom)
A. Krier, Lancaster Univ. (United Kingdom)
R. Jones, Lancaster Univ. (United Kingdom)
V. I. Vasil'ev, A.F. Ioffe Physico-Technical Institute (Russia)
G. S. Gagis, A.F. Ioffe Physico-Technical Institute (Russia)
V. I. Kuchinskii, A.F. Ioffe Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 6479:
Quantum Sensing and Nanophotonic Devices IV
Manijeh Razeghi; Gail J. Brown, Editor(s)

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