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Proceedings Paper

Demonstration of sub-45-nm features using azimuthal polarization on a 1.30NA immersion microstepper
Author(s): Emil C. Piscani; Shane Palmer; Chris Van Peski
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Paper Abstract

The practical extendibility of immersion lithography to the 45nm half-pitch is being investigated on a 1.30NA immersion projection microstepper installed at SEMATECH North in Albany, New York. Preliminary implementation of various aperture designs and polarization configurations have been used to demonstrate imaging beyond the 90nm pitch. Optical proximity correction (OPC) and other resolution enhancement technique (RET) strategies coupled with resist stack optimization of dual-layer bottom anti-reflective coating (BARC) systems offer a growing platform of materials and illumination configurations for the 45nm node. In this demonstration of a RET strategy, linear-polarized light is selectively rotated at the coherence aperture to simultaneously image sub-90nm pitch features along the x and y axes within the same field. Scanning electron microscope (SEM) images demonstrate the capability of the immersion micro-exposure tool (iMET) to support dual-orientation imaging with resolution down to the 84nm pitch.

Paper Details

Date Published: 27 March 2007
PDF: 10 pages
Proc. SPIE 6520, Optical Microlithography XX, 652025 (27 March 2007); doi: 10.1117/12.720863
Show Author Affiliations
Emil C. Piscani, SEMATECH, Inc. (United States)
Shane Palmer, Texas Instruments (United States)
SEMATECH, Inc. (United States)
Chris Van Peski, SEMATECH, Inc. (United States)


Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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