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Proceedings Paper

Electrostatic chucking of EUVL reticles
Author(s): Madhura Nataraju; Jaewoong Sohn; Andrew R. Mikkelson; Roxann L. Engelstad; Kevin T. Turner; Chris K. Van Peski; Kevin J. Orvek
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Paper Abstract

Characterizing the effect of electrostatic chucking on the flatness of Extreme Ultraviolet Lithography (EUVL) reticles is necessary for the implementation of EUVL for the sub-32 nm node. In this research, finite element (FE) models have been developed to predict the flatness of reticles when clamped by a bipolar Coulombic pin chuck. Nonflatness measurements of the reticle and chuck surfaces were used to create the model geometry. Chucking was then simulated by applying forces consistent with the pin chuck under consideration. The effect of the nonuniformity of electrostatic forces due to the presence of gaps between the chuck and reticle backside surfaces was also included. The model predictions of the final pattern surface shape of the chucked reticle have been verified with chucking experiments and the results have established the validity of the models. Parametric studies with varying reticle shape, chuck shape, chuck geometry, and chucking pressure performed using FE modeling techniques are extremely useful in the development of SEMI standards for EUVL.

Paper Details

Date Published: 15 March 2007
PDF: 8 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170Y (15 March 2007); doi: 10.1117/12.720621
Show Author Affiliations
Madhura Nataraju, Univ. of Wisconsin/Madison (United States)
Jaewoong Sohn, Univ. of Wisconsin/Madison (United States)
Andrew R. Mikkelson, Univ. of Wisconsin/Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin/Madison (United States)
Kevin T. Turner, Univ. of Wisconsin/Madison (United States)
Chris K. Van Peski, SEMATECH Inc. (United States)
Kevin J. Orvek, SEMATECH Inc. (United States)


Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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