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Proceedings Paper

InGaAsP avalanche photodetectors for non-gated 1.06 um photon-counting receivers
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Paper Abstract

For the detection of single photons at 1.06 μm, silicon-based single photon avalanche diodes (SPADs) used at shorter wavelengths have very low single photon detection efficiency (~1 - 2%), while InP/InGaAs SPADs designed for telecommunications wavelengths near 1.5 μm exhibit dark count rates that generally inhibit non-gated (free-running) operation. To bridge this "single photon detection gap" for wavelengths just beyond 1 μm, we have developed high performance, large area (80 - 200 μm diameter) InP-based InGaAsP quaternary absorber SPADs optimized for operation at 1.06 μm. We demonstrate dark count rates that are sufficiently low to allow for non-gated operation while achieving detection efficiencies far surpassing those found for Si SPADs. At a detection efficiency of 10%, 80 μm diameter devices exhibit dark count rates below 1000 Hz and photon counting rates exceeding 1 MHz when operated at -40 °C.

Paper Details

Date Published: 7 May 2007
PDF: 10 pages
Proc. SPIE 6572, Enabling Photonics Technologies for Defense, Security, and Aerospace Applications III, 65720G (7 May 2007); doi: 10.1117/12.719471
Show Author Affiliations
Mark A. Itzler, Princeton Lightwave Inc. (United States)
Xudong Jiang, Princeton Lightwave Inc. (United States)
Rafael Ben-Michael, Princeton Lightwave Inc. (United States)
Krystyna Slomkowski, Princeton Lightwave Inc. (United States)
Michael A. Krainak, NASA Goddard Space Flight Ctr. (United States)
Stewart Wu, NASA Goddard Space Flight Ctr. (United States)
Xiaoli Sun, NASA Goddard Space Flight Ctr. (United States)


Published in SPIE Proceedings Vol. 6572:
Enabling Photonics Technologies for Defense, Security, and Aerospace Applications III
Michael J. Hayduk; Andrew R. Pirich; Peter J. Delfyett; Eric J. Donkor; John P. Barrios; Rebecca J. Bussjager; Michael L. Fanto; Robert L. Kaminski; Guifang Li; Hooman Mohseni; Edward W. Taylor, Editor(s)

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