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Proceedings Paper

High brightness semiconductor lasers from 780-1064-nm
Author(s): R. M. Lammert; W. Hu; S. W. Oh; M. L. Osowski; C. Panja; P. T. Rudy; T. Stakelon; J. E. Ungar
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Paper Abstract

We present recent advances in high power semiconductor laser bars and arrays at near infrared wavelengths including increased spectral brightness with internal gratings to narrow and stabilize the spectrum and increased spatial brightness with multimode and high power single mode performance. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.

Paper Details

Date Published: 10 May 2007
PDF: 7 pages
Proc. SPIE 6552, Laser Source Technology for Defense and Security III, 655212 (10 May 2007); doi: 10.1117/12.719367
Show Author Affiliations
R. M. Lammert, QPC Lasers, Inc. (United States)
W. Hu, QPC Lasers, Inc. (United States)
S. W. Oh, QPC Lasers, Inc. (United States)
M. L. Osowski, QPC Lasers, Inc. (United States)
C. Panja, QPC Lasers, Inc. (United States)
P. T. Rudy, QPC Lasers, Inc. (United States)
T. Stakelon, QPC Lasers, Inc. (United States)
J. E. Ungar, QPC Lasers, Inc. (United States)


Published in SPIE Proceedings Vol. 6552:
Laser Source Technology for Defense and Security III
Gary L. Wood; Mark A. Dubinskii, Editor(s)

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