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Proceedings Paper

Uniformity studies of inductively coupled plasma etching in fabrication of HgCdTe detector arrays
Author(s): R. Bommena; S. Velicu; P. Boieriu; T. S. Lee; C. H. Grein; K. K. Tedjojuwono
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Paper Abstract

Inductively coupled plasma (ICP) chemistry based on a mixture of CH4, Ar, and H2 was investigated for the purpose of delineating HgCdTe mesa structures and vias typically used in the fabrication of second and third generation infrared photo detector arrays. We report on ICP etching uniformity results and correlate them with plasma controlling parameters (gas flow rates, total chamber pressure, ICP power and RF power). The etching rate and surface morphology of In-doped MWIR and LWIR HgCdTe showed distinct dependences on the plasma chemistry, total pressure and RF power. Contact stylus profilometry and cross-section scanning electron microscopy (SEM) were used to characterize the anisotropy of the etched profiles obtained after various processes and a standard deviation of 0.06 &mgr;m was obtained for etch depth on 128 x 128 format array vias. The surface morphology and the uniformity of the etched surfaces were studied by plan view SEM. Atomic force microscopy was used to make precise assessments of surface roughness.

Paper Details

Date Published: 14 May 2007
PDF: 11 pages
Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 65420J (14 May 2007); doi: 10.1117/12.719350
Show Author Affiliations
R. Bommena, EPIR Technologies, Inc. (United States)
S. Velicu, EPIR Technologies, Inc. (United States)
P. Boieriu, EPIR Technologies, Inc. (United States)
T. S. Lee, EPIR Technologies, Inc. (United States)
C. H. Grein, EPIR Technologies, Inc. (United States)
K. K. Tedjojuwono, NASA Langley Research Ctr. (United States)

Published in SPIE Proceedings Vol. 6542:
Infrared Technology and Applications XXXIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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