Share Email Print

Proceedings Paper

Photonic properties of ZnO epilayers
Author(s): M. R. Wagner; U. Haboeck; P. Zimmer; A. Hoffmann; S. Lautenschläger; C. Neumann; J. Sann; B. K. Meyer
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The characterization by various experimental techniques of homoepitaxial growth and photonic properties of ZnO epilayers was exhaustively analyzed. The photonic properties of ZnO as promising material for the realization of polariton lasers were investigated by angular dependent reflection spectroscopy. The fitting of the polariton dispersion curve with the experimental results provided us information about the longitudinal-transverse exciton-polariton splitting and damping constants. In addition, the valence band symmetry was examined by angular resolved magneto-optical photoluminescence. From our theoretical and experimental results we extracted evidence that the topmost A valence band possesses Г7 symmetry. Micro-Raman spectroscopy revealed even in homoepitaxially grown samples the existence of compressive or tensile strain which varied not only in the ZnO layers but also in the templates. In contrast, the untreated substrates were uniformly strained. Sporadically crystal perturbations culminating in the formation of separated growth domains were observed. Additionally, resonant Raman scattering was performed, showing a strong enhancement of the 2E1(LO) mode for resonant excitation of the I8 bound exciton complex. We suggest that the resonant Raman scattering led to a longer lifetime of the resonantly excited phonon mode due to a strong exciton-phonon interaction.

Paper Details

Date Published: 20 February 2007
PDF: 13 pages
Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64740X (20 February 2007); doi: 10.1117/12.717785
Show Author Affiliations
M. R. Wagner, Technische Univ. Berlin (Germany)
U. Haboeck, Technische Univ. Berlin (Germany)
P. Zimmer, Technische Univ. Berlin (Germany)
A. Hoffmann, Technische Univ. Berlin (Germany)
S. Lautenschläger, Justus Liebig Univ. Giessen (Germany)
C. Neumann, Justus Liebig Univ. Giessen (Germany)
J. Sann, Justus Liebig Univ. Giessen (Germany)
B. K. Meyer, Justus Liebig Univ. Giessen (Germany)

Published in SPIE Proceedings Vol. 6474:
Zinc Oxide Materials and Devices II
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

© SPIE. Terms of Use
Back to Top