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Proceedings Paper

Comparison of the effect of TiOx lines number in the tunneling junctions to the tunneling phenomenon
Author(s): Chaoyan Zhang; Qinggang Liu; Shilin Zhang; Dachao Li; Xiaotang Hu
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Paper Abstract

In this paper, tunneling phenomena of tunneling junctions are studied and analyzed. Tunneling junction is the basic structure of single electric transistor (SET) and other nano devices. Ultra fine oxidized titanium (Ti) lines are formed on the Ti layer, which is 3nm thick and sputtered on a SiO2 substrate by magnetron sputtering. The atomic force microscope (AFM)'s tip is used as a selective anodization electrode to oxidate the Ti film between electrode structures that are formed by photo lithography. Ti-TiOx-Ti forms metal-insulator-metal (MIM) tunneling junction, and TiOx works as an energy barrier for the electron. Different number of TiOx lines is fabricated between two electrodes by controlling fabrication condition and environment at the same value. And then, the I-V characteristics of tunneling junctions with different number of TiOx lines are measured. The results indicate that the tunneling phenomena of tunneling junctions with different number of TiOx lines are different.

Paper Details

Date Published: 28 October 2006
PDF: 5 pages
Proc. SPIE 6358, Sixth International Symposium on Instrumentation and Control Technology: Sensors, Automatic Measurement, Control, and Computer Simulation, 63580B (28 October 2006); doi: 10.1117/12.717637
Show Author Affiliations
Chaoyan Zhang, Tianjin Univ. (China)
Qinggang Liu, Tianjin Univ. (China)
Shilin Zhang, Tianjin Univ. (China)
Dachao Li, Tianjin Univ. (China)
Xiaotang Hu, Tianjin Univ. (China)


Published in SPIE Proceedings Vol. 6358:
Sixth International Symposium on Instrumentation and Control Technology: Sensors, Automatic Measurement, Control, and Computer Simulation
Jiancheng Fang; Zhongyu Wang, Editor(s)

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