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Proceedings Paper

Small footprint InGaSb/AlGaAsSb multiple-quantum-well light-emitting diodes
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Paper Abstract

Mid-infrared light-emitting diodes with InGaSb/AlGaAsSb triple-quantum-well active region have been integrated into arrays of either 200×200 μm2 or 40×40 μm2 square pixels. Two generations of arrays have been designed, fabricated and tested. The first, "sparse" 6×6 array provided valuable information on optimal electrode design and fabrication parameters that was used in the design and processing of the second generation "dense" 11×11 array.

Paper Details

Date Published: 22 March 2007
PDF: 11 pages
Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 646802 (22 March 2007); doi: 10.1117/12.717247
Show Author Affiliations
Nathan J. Withers, CHTM/Univ. of New Mexico (United States)
Gennady A. Smolyakov, CHTM/Univ. of New Mexico (United States)
Hongjun Cao, CHTM/Univ. of New Mexico (United States)
Ron Kaspi, Air Force Research Lab. (United States)
Marek Osiński, CHTM/Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 6468:
Physics and Simulation of Optoelectronic Devices XV
Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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