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Proceedings Paper

Pattern formation in multistacked-quantum-dot-based microcavities: modelization and role of gain asymmetries in the alpha factor
Author(s): T. Maggipinto; M. Brambilla; I. M. Perrini; S. Barbay; R. Kuszelewicz
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Paper Abstract

We develop a model that describes the optical response of a semiconductor quantum dot microcavity pumped above transparency but kept slightly below threshold. The model takes into account the inhomogeneous broadening of the dot emission, the coupling mechanisms between quantum dots and the wetting layer and incorporates gain asymmetry factors in the thermo-emission and capture coefficients. The role of asymmetries with respect to alpha factor and pattern formation is investigated. We then study the conditions for the onset of bistability and modulational instability and characterize the patterns formed.

Paper Details

Date Published: 6 February 2007
PDF: 12 pages
Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64681B (6 February 2007); doi: 10.1117/12.717185
Show Author Affiliations
T. Maggipinto, CNR-INFM, Univ. e Politecnico di Bari (Italy)
M. Brambilla, CNR-INFM, Univ. e Politecnico di Bari (Italy)
I. M. Perrini, CNR-INFM, Univ. e Politecnico di Bari (Italy)
S. Barbay, Lab. de Photonique et Nanostructures/CNRS (France)
R. Kuszelewicz, Lab. de Photonique et Nanostructures/CNRS (France)


Published in SPIE Proceedings Vol. 6468:
Physics and Simulation of Optoelectronic Devices XV
Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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