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Proceedings Paper

Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs
Author(s): T. Kawashima; T. Nagai; D. Iida; A. Miura; Y. Okadome; Y. Tsuchiya; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki
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Paper Abstract

We report on low-defect-density non-polar a-plane and m-plane GaN films grown by sidewall epitaxial lateral overgrowth (SELO) technique. Dislocations and stacking faults were decreased markedly over the whole area, and surface roughness was decreased with decreasing defect density. The photoluminescence intensity of SELO a-plane and m-plane GaN was about 200 times higher than that of a-plane and m-plane GaN template. We also fabricated and characterized LEDs on a-plane and m-plane GaN using SELO technique. The light power of LEDs increased with decreasing of threading dislocation.

Paper Details

Date Published: 6 February 2007
PDF: 8 pages
Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64680S (6 February 2007); doi: 10.1117/12.717182
Show Author Affiliations
T. Kawashima, Meijo Univ. (Japan)
T. Nagai, Meijo Univ. (Japan)
D. Iida, Meijo Univ. (Japan)
A. Miura, Meijo Univ. (Japan)
Y. Okadome, Meijo Univ. (Japan)
Y. Tsuchiya, Meijo Univ. (Japan)
M. Iwaya, Meijo Univ. (Japan)
S. Kamiyama, Meijo Univ. (Japan)
H. Amano, Meijo Univ. (Japan)
I. Akasaki, Meijo Univ. (Japan)


Published in SPIE Proceedings Vol. 6468:
Physics and Simulation of Optoelectronic Devices XV
Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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