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Proceedings Paper

Techniques for high quality SiO2 films
Author(s): J. Nguyen; M. Razeghi
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Paper Abstract

We report on the comparison of optical, structural, and electrical properties of SiO2 using plasma-enhanced chemical vapor deposition and ion-beam sputtering deposition. High-quality, low-temperature deposition of SiO2 by ion-beam sputtering deposition is shown to have lower absorption, smoother and more densely packed films, a lower amount of fixed oxide charges, and a lower trapped-interface density than SiO2 by plasma-enhanced chemical vapor deposition. This high-quality SiO2 is then demonstrated as an excellent electrical and mechanical surface passivation layer on Type-II InAs/GaSb photodetectors. The device performance improved by at least two orders of magnitude in surface resistivity, trap density, and zero-bias resistance-area product. The passivation layer also allows the device the ability to withstand the reflow and curing of underfill epoxy.

Paper Details

Date Published: 2 February 2007
PDF: 8 pages
Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 64791K (2 February 2007); doi: 10.1117/12.716608
Show Author Affiliations
J. Nguyen, Northwestern Univ. (United States)
M. Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 6479:
Quantum Sensing and Nanophotonic Devices IV
Manijeh Razeghi; Gail J. Brown, Editor(s)

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