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Proceedings Paper

Intra-center relaxation in shallow centerrs in silicon
Author(s): Ekaterina E. Orlova; Dmitriy V. Kozlov; A. V. Antonov; J. Niels Hovenier; Tjeerd O. Klaassen; A. Adam; Miron S. Kagan; Igor V. Altukhov; Q. V. Nguyen; D. A. Carder; P. J. Phillips; B. Redlich
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Paper Details

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Proc. SPIE 6482, Advanced Optical and Quantum Memories and Computing IV, 648211; doi: 10.1117/12.716492
Show Author Affiliations
Ekaterina E. Orlova, Institute for Physics of Microstructures (Russia)
Dmitriy V. Kozlov, Institute for Physics of Microstructures (Russia)
A. V. Antonov, Institute for Physics of Microstructures (Russia)
J. Niels Hovenier, Technische Univ. Delft (Netherlands)
Tjeerd O. Klaassen, Technische Univ. Delft (Netherlands)
A. Adam, Technische Univ. Delft (Netherlands)
Miron S. Kagan, Institute of Radio Engineering and Electronics (Russia)
Igor V. Altukhov, Institute of Radio Engineering and Electronics (Russia)
Q. V. Nguyen, FOM-Institute for Plasma Physics (Netherlands)
D. A. Carder, FOM-Institute for Plasma Physics (Netherlands)
P. J. Phillips, FOM-Institute for Plasma Physics (Netherlands)
B. Redlich, FOM-Institute for Plasma Physics (Netherlands)


Published in SPIE Proceedings Vol. 6482:
Advanced Optical and Quantum Memories and Computing IV
Zameer U. Hasan; Alan E. Craig; Selim M. Shahriar; Hans J. Coufal, Editor(s)

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