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Proceedings Paper

New developments in ZnO materials and devices
Author(s): D. C. Look
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Paper Abstract

We will examine a few of the outstanding new ZnO materials and device developments published in 2006. In the area of bulk crystal growth, high-quality 3-inch ZnO wafers grown by the hydrothermal method have become available, and Bridgman growth has also been developed. In the thin-film area, excellent ZnO layers have been grown by liquid-phase epitaxy. Other types of epitaxial material have also shown improvements, and the quantum Hall effect has now been observed, along with photoluminescence (PL) linewidths as low as 110 &mgr;eV. In the area of impurity characterization, radioactive-tracer methods have been used to make positive identifications of the PL donor-bound exciton lines I8 and I9, as due to Ga and In, respectively. Our understanding of the common impurity H has also advanced, because it is now known from both theory and experiment that interstitial H is not stable at room temperature. The same is true of the native interstitials, ZnI and OI. New results suggest that the common H-related shallow donor is probably multibonded H substitutional on an O site, and the ZnI-related shallow donor is probably a complex, such as ZnI-NO. In the important area of p-type ZnO, it has been demonstrated that Li and N co-doped material has a resistivity as low as 1 &OHgr;-cm and is stable for at least one year. Also, many groups were able to make thin-film and nanowire or nanorod p-n junction light emitting diodes (LEDs). Another very exciting development was the creation of an edge-emitting laser diode, from rows of n-ZnO nanocrystals on a p-GaN thin film. Electronic devices, including transparent transistors, also made great strides, producing record field-effect mobilities.

Paper Details

Date Published: 20 February 2007
PDF: 8 pages
Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 647402 (20 February 2007); doi: 10.1117/12.716401
Show Author Affiliations
D. C. Look, Wright State Univ. (United States)
Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 6474:
Zinc Oxide Materials and Devices II
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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