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Proceedings Paper

Three-dimensional mask effects and source polarization impact on OPC model accuracy and process window
Author(s): M. Saied; F. Foussadier; J. Belledent; Y. Trouiller; I. Schanen; C. Gardin; J. C. Urbani; P. K. Montgomery; F. Sundermann; F. Robert; C. Couderc; F. Vautrin; G. Kerrien; J. Planchot; E. Yesilada; C. Martinelli; B. Wilkinson; A. Borjon; L. Le-Cam; J. L. Di-Maria; Y. Rody; N. Morgana; Vincent Farys
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Paper Abstract

As semiconductor technology moves toward and beyond the 65 nm lithography node, the importance of Optical Proximity Correction (OPC) models grows due to the lithographer's need to ensure high fidelity in the mask- to-silicon transfer. This, in turn, causes OPC model complexity to increase as NA increases and minimum feature size on the mask decreases. Subtle effects, that were considered insignificant, can no longer be ignored. Depending on the imaging system, three dimensional mask effects need to be included in OPC modeling. These effects can be used to improve model accuracy and to better predict the final process window. In this paper, the effects of 3D mask topology on process window are studied using several 45 nm node mask structure types. Simulations are conducted with and without a polarized illumination source. The benefits of using an advanced model algorithm, that comprehends 3D mask effects, will be discussed. To quantify the potential impact of this methodology, relative to current best known practices, all results are compared to those obtained from a model using a conventional thin film mask.

Paper Details

Date Published: 27 March 2007
PDF: 12 pages
Proc. SPIE 6520, Optical Microlithography XX, 65204Q (27 March 2007); doi: 10.1117/12.715120
Show Author Affiliations
M. Saied, Freescale Semiconductor (France)
F. Foussadier, STMicroelectronics (France)
J. Belledent, NXP Semiconductors (France)
Y. Trouiller, CEA-LETI (France)
I. Schanen, IMEP (France)
C. Gardin, Freescale Semiconductor (France)
J. C. Urbani, STMicroelectronics (France)
P. K. Montgomery, Freescale Semiconductor (France)
F. Sundermann, STMicroelectronics (France)
F. Robert, STMicroelectronics (France)
C. Couderc, NXP Semiconductors (France)
F. Vautrin, STMicroelectronics (France)
G. Kerrien, STMicroelectronics (France)
J. Planchot, STMicroelectronics (France)
E. Yesilada, Freescale Semiconductor (France)
C. Martinelli, STMicroelectronics (France)
B. Wilkinson, Freescale Semiconductor (France)
A. Borjon, NXP Semiconductors (France)
L. Le-Cam, NXP Semiconductors (France)
J. L. Di-Maria, CEA-LETI (France)
Y. Rody, NXP Semiconductors (France)
N. Morgana, Photronics, Inc. (France)
Vincent Farys, STMicroelectronics (France)

Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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