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Proceedings Paper

Novel high-index resists for 193-nm immersion lithography and beyond
Author(s): Idriss Blakey; Lan Chen; Bronwin Dargaville; Heping Liu; Andrew Whittaker; Will Conley; Emil Piscani; Georgia Rich; Alvina Williams; Paul Zimmerman
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Paper Abstract

A preliminary Quantitative Structure Property Relationship (QSPR) model for predicting the refractive index of small molecules and polymers at 193 nm is presented. Although at this stage the model is only semiquantitative we have found it useful for screening databases of commercially-available compounds for high refractive index targets to include in our program of synthesis of high refractive index resist polymers. These resists are targeted for use in 2nd and 3rd generation 193 nm immersion lithography. Using this methodology a range of targets were identified and synthesized via free radical polymerization. Novel resist polymers were also synthesized via Michael addition polymerization. Preliminary dose to clear experiments identified a number of promising candidates for incorporation into high refractive index resist materials. Furthermore, we have demonstrated imaging of a high index resist using water-based 193 nm immersion lithography.

Paper Details

Date Published: 22 March 2007
PDF: 9 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651909 (22 March 2007); doi: 10.1117/12.715108
Show Author Affiliations
Idriss Blakey, The Univ. of Queensland (Australia)
Lan Chen, The Univ. of Queensland (Australia)
Bronwin Dargaville, The Univ. of Queensland (Australia)
Heping Liu, The Univ. of Queensland (Australia)
Andrew Whittaker, The Univ. of Queensland (Australia)
Will Conley, Freescale Semiconductor, Inc. (United States)
Emil Piscani, Sematech, Inc. (United States)
Georgia Rich, Sematech, Inc. (United States)
Alvina Williams, Sematech, Inc. (United States)
Paul Zimmerman, Sematech, Inc. (United States)

Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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