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Proceedings Paper

Extreme ultraviolet interference lithography with incoherent light
Author(s): Patrick P. Naulleau; Christopher N. Anderson; Stephen F Horne
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Paper Abstract

In order to address the crucial problem of high-resolution low line-edge roughness resist for extreme ultraviolet (EUV) lithography, researchers require significant levels of access to high-resolution EUV exposure tools. The prohibitively high cost of such tools, even microfield tools, has greatly limited this availability and arguably hindered progress in the area of EUV resists. To address this problem, we propose the development of a new interference lithography tool capable of working with standalone incoherent EUV sources. Although EUV interference lithography tools are currently in operation, presently used designs require illumination with a high degree of spatial and/or temporal coherence. This, in practice, limits current systems to being implemented at synchrotron facilities greatly restricting the accessibility of such systems. Here we describe an EUV interference lithography system design capable of overcoming the coherence limitations, allowing standalone high-power broad sources to be used without the need for excessive spatial or temporal filtering. Such a system provides promising pathway for the commercialization of EUV interference lithography tools.

Paper Details

Date Published: 21 March 2007
PDF: 8 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65172T (21 March 2007); doi: 10.1117/12.715069
Show Author Affiliations
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Christopher N. Anderson, Univ. of California, Berkeley (United States)
Stephen F Horne, Energetiq Technology Inc. (United States)


Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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