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Proceedings Paper

Scatterometry on pelliclized masks: an option for wafer fabs
Author(s): Emily Gallagher; Craig Benson; Masaru Higuchi; Yasuhiro Okumoto; Michael Kwon; Sanjay Yedur; Shifang Li; Sangbong Lee; Milad Tabet
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Paper Abstract

Optical scatterometry-based metrology is now widely used in wafer fabs for lithography, etch, and CMP applications. This acceptance of a new metrology method occurred despite the abundance of wellestablished CD-SEM and AFM methods. It was driven by the desire to make measurements faster and with a lower cost of ownership. Over the last year, scatterometry has also been introduced in advanced mask shops for mask measurements. Binary and phase shift masks have been successfully measured at all desired points during photomask production before the pellicle is mounted. There is a significant benefit to measuring masks with the pellicle in place. From the wafer fab's perspective, through-pellicle metrology would verify mask effects on the same features that are characterized on wafer. On-site mask verification would enable quality control and trouble-shooting without returning the mask to a mask house. Another potential application is monitoring changes to mask films once the mask has been delivered to the fab (haze, oxide growth, etc.). Similar opportunities apply to the mask metrologist receiving line returns from a wafer fab. The ability to make line-return measurements without risking defect introduction is clearly attractive. This paper will evaluate the feasibility of collecting scatterometry data on pelliclized masks. We explore the effects of several different pellicle types on scatterometry measurements made with broadband light in the range of 320-780 nm. The complexity introduced by the pellicles' optical behavior will be studied.

Paper Details

Date Published: 5 April 2007
PDF: 8 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65181T (5 April 2007); doi: 10.1117/12.714997
Show Author Affiliations
Emily Gallagher, IBM Corp. (United States)
Craig Benson, IBM Corp. (United States)
Masaru Higuchi, Toppan Electronics Inc. (United States)
Yasuhiro Okumoto, Toppan Electronics Inc. (United States)
Michael Kwon, Timbre Technologies, Inc. (United States)
Sanjay Yedur, Timbre Technologies, Inc. (United States)
Shifang Li, Timbre Technologies, Inc. (United States)
Sangbong Lee, Nanometrics, Inc. (United States)
Milad Tabet, Nanometrics, Inc. (United States)


Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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