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Proceedings Paper

Köhler illumination analysis for high-resolution optical metrology using 193 nm light
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Paper Abstract

Dependence of Köhler factor 2 (KF 2: angular homogeneity) and Köhler factor 3 (KF 3: wavefront homogeneity) on the intensity profile of line target was investigated for an optical system designed for high-resolution optical metrology using ArF excimer laser of a wavelength of 193 nm. The intensity profiles for the isolated and multiple lines of 60 nm linewidth were simulated based on the diffraction propagation by introducing the changes of NA (KF 2) and aberrations such as defocus and coma (KF 3) to the illumination beam. From the results it was demonstrated that the intensity profiles for the line targets were influenced by the change of the illumination condition, being distorted in shape and magnitude.

Paper Details

Date Published: 13 April 2007
PDF: 7 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184V (13 April 2007); doi: 10.1117/12.714890
Show Author Affiliations
Yeungjoon Sohn, National Institute of Standards and Technology (United States)
Richard M. Silver, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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