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Proceedings Paper

Transition from precise to accurate critical dimension metrology
Author(s): Vladimir A. Ukraintsev; Margaret C. Tsai; Tom Lii; Ricky A. Jackson
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Paper Abstract

A new measurement system analysis (MSA) methodology has been developed at Texas Instruments (TI) to evaluate the status of the 65 nm technology critical dimension (CD) metrology and its readiness for production. Elements of the methodology were used in a previously reported scatterometry evaluation [1]. At every critical process level the precision, bias, linearity and total measurement uncertainty (TMU) were evaluated for metrology fleet over extended periods of time, and with the technology representative set of samples. The samples with variations that fully covered and often exceeded process space were pre-calibrated by CD atomic force microscope (AFM). CD AFM measurement precision was determined for every analyzed process level based on repeated measurements conducted over several days. The National Institute of Standards and Technologies (NIST) traceable standards were used to verify CD AFM line CD and scale calibrations. Therefore, for the first time the NIST traceability has been established for CD metrology at every critical process level for the entire technology. The data indicates an overall healthy status of the 65 nm CD metrology. Sub-nanometer accuracy has been established for gate CD metrology. The thorough CD metrology characterization and specifically absolute CD calibration were instrumental in seamless technology transfer from 200 mm to 300 mm fabs. The qualification of CD metrology also revealed several problems. Most of these are well-known from previous studies and should soon be addressed. CD scanning electron microscopy (SEM) has a systematic problem with bias of CD measurements. The problem is common for several front-end and back-end of line process levels. For most process levels, TMU of CD SEM is noticeably affected by sample modification inflicted by electron irradiation (shrinkage, charging, buildups, etc.). This causes problems, especially in the case of fleet TMU evaluation. An improved data collection methodology should be devised to minimize the impact of sample modification on fleet TMU measurements. The reported progress in semiconductor industrial CD metrology became possible after a recent breakthrough in line CD standard technology [2,3], recognition of CD AFM as an instrument for CD traceability [4,5] and development of the concept and mathematical tools for TMU analysis [6,7].

Paper Details

Date Published: 5 April 2007
PDF: 14 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65181H (5 April 2007); doi: 10.1117/12.714528
Show Author Affiliations
Vladimir A. Ukraintsev, Texas Instruments, Inc. (United States)
Margaret C. Tsai, Texas Instruments, Inc. (United States)
Tom Lii, Texas Instruments, Inc. (United States)
Ricky A. Jackson, Texas Instruments, Inc. (United States)

Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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