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Proceedings Paper

Transport properties of non magnetic and magnetic ZnO thin films under field effect
Author(s): E. Bellingeri; I. Pallecchi; M. Putti; L. Pellegrino; A. Caviglia; G. Canu; A. Gerbi; M. Vignolo; A. S. Siri; D. Marré
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Paper Abstract

The integration of ZnO based high mobility transparent semiconductors with perovskites that exhibit a wide spectrum of physical properties (superconductivity, ferroelectricity, ferromagnetism, etc.) may lead to a wide variety of new electronic/optoelectronic devices. Here we present results about the deposition of high crystalline quality Al or Co doped ZnO films grown by pulsed laser deposition on 110 face of strontium titanate single crystals. Field Effect (FE) experiment, allowing to change the carrier concentration of the film by more then 4 orders of magnitude (from ≈1015 to ≈1020 e-/cm3, estimated by Hall effect measurements under FE), were employed to investigate transport mechanisms in depth. In particular we observed a crossover of low temperature magnetoresistance from a negative behaviour in the accumulation state to a positive one in the depletion state. The measurement of the activation energy as a function of the Gate potential allowed to get information on the density of states.

Paper Details

Date Published: 20 February 2007
PDF: 9 pages
Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64741R (20 February 2007); doi: 10.1117/12.714400
Show Author Affiliations
E. Bellingeri, CNR-INFM LAMIA (Italy)
I. Pallecchi, CNR-INFM LAMIA (Italy)
M. Putti, CNR-INFM LAMIA (Italy)
Genoa Univ. (Italy)
L. Pellegrino, CNR-INFM LAMIA (Italy)
Genoa Univ. (Italy)
A. Caviglia, Genoa Univ. (Italy)
G. Canu, Genoa Univ. (Italy)
A. Gerbi, CNR-INFM LAMIA (Italy)
M. Vignolo, CNR-INFM LAMIA (Italy)
A. S. Siri, CNR-INFM LAMIA (Italy)
Genoa Univ. (Italy)
D. Marré, CNR-INFM LAMIA (Italy)
Genoa Univ. (Italy)


Published in SPIE Proceedings Vol. 6474:
Zinc Oxide Materials and Devices II
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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