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Proceedings Paper

Hybrid optical: electron-beam resists
Author(s): D. M. Lennon; S. J. Spector; T. H. Fedynyshyn; T. M. Lyszczarz; M. Rothschild; J. Thackeray; K. Spear-Alfonso
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Paper Abstract

Combining optical and electron beam exposures on the same wafer level is an attractive approach for extending the usefulness of current generation optical tools. This technique requires high-performance hybrid resists that perform equally well with optical and e-beam tools. In this paper Rohm and Haas EPICTM 2340, a 193-nm chemically amplified photoresist, is used in a hybrid exposure role. The e-beam tool was used to pattern 45 nm half-pitch features and a 193- nm immersion stepper was used to pattern 60-nm half-pitch features in the same resist layer. The effects of processing parameters and delay times were investigated.

Paper Details

Date Published: 23 March 2007
PDF: 10 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65190H (23 March 2007); doi: 10.1117/12.714370
Show Author Affiliations
D. M. Lennon, MIT Lincoln Lab. (United States)
S. J. Spector, MIT Lincoln Lab. (United States)
T. H. Fedynyshyn, MIT Lincoln Lab. (United States)
T. M. Lyszczarz, MIT Lincoln Lab. (United States)
M. Rothschild, MIT Lincoln Lab. (United States)
J. Thackeray, Rohm and Haas Electronic Materials (United States)
K. Spear-Alfonso, Rohm and Haas Electronic Materials (United States)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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