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Proceedings Paper

MOCVD growth and regrowth of quantum cascade lasers
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Paper Abstract

MOCVD grown quantum cascade lasers (QCLs) have demonstrated about the same level performance as MBE grown QCLs. With the regrowth capability to fabricate buried heterostructure (BH) waveguides, the QCL output power has been dramatically increased and that opens the door to many mid-IR (and THz) applications. With the stable and high growth rate to produce high performance and reliable BH lasers, commercialization of QCLs with reasonable qualification and affordable price becomes possible. Furthermore with a good gain material and the etching and regrowth capability, optoelectronic integration can be realized using MOCVD growth techniques. We compare the MBE and MOCVD growth techniques and discuss important issues on growth rate stabilization and the control of growth quality at the hetero-interface. We also go over a few growth and integration examples we are working on that are preferentially done by MOCVD. Finally we describe a detailed QCL BH regrowth study and discussed how that can be done right.

Paper Details

Date Published: 8 February 2007
PDF: 10 pages
Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 64850N (8 February 2007); doi: 10.1117/12.714269
Show Author Affiliations
Fow-Sen Choa, Univ. of Maryland, Baltimore County (United States)
Liwei Cheng, Univ. of Maryland, Baltimore County (United States)
Xiaoming Ji, Univ. of Maryland, Baltimore County (United States)
Zhijun Liu, Princeton Univ. (United States)
Daniel Wasserman, Princeton Univ. (United States)
Scott S. Howard, Princeton Univ. (United States)
Claire F. Gmachl, Princeton Univ. (United States)
Xiaojun Wang, AdTech Optics (United States)
Jenyu Fan, AdTech Optics (United States)
Jacob Khurgin, The Johns Hopkins Univ. (United States)

Published in SPIE Proceedings Vol. 6485:
Novel In-Plane Semiconductor Lasers VI
Carmen Mermelstein; David P. Bour, Editor(s)

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