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Proceedings Paper

Quantum dot lasers and integrated guided wave devices on Si
Author(s): Jun Yang; Zetian Mi; Pallab Bhattacharya
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Paper Abstract

We have studied the growth and characteristics of self-organized InGaAs/GaAs quantum dot lasers and their monolithic integration with waveguides and quantum well electroabsorption modulators on Si. Utilizing multiple layers of InAs quantum dots as effective dislocation filters near the GaAs-Si interface, we have demonstrated high performance quantum dot lasers grown directly on Si that exhibit, for the first time, relatively low threshold current (Jth = 900 A/cm2), large characteristic temperature (T0 = 278 K), and output slope efficiency ( ⩾0.3 W/A). Focused-ion-beam milling has been used to form high-quality facets for the cavity mirror and coupling groove of an integrated laser/waveguide system on Si. We have also achieved a groove-coupled laser/modulator system on Si that exhibits a coupling coefficient greater than 20% and a modulation depth of ~ 100% at 5 V reverse bias.

Paper Details

Date Published: 8 February 2007
PDF: 12 pages
Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648514 (8 February 2007); doi: 10.1117/12.714262
Show Author Affiliations
Jun Yang, Univ. of Michigan (United States)
Zetian Mi, Univ. of Michigan (United States)
Pallab Bhattacharya, Univ. of Michigan (United States)


Published in SPIE Proceedings Vol. 6485:
Novel In-Plane Semiconductor Lasers VI
Carmen Mermelstein; David P. Bour, Editor(s)

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