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Proceedings Paper

Laser charactersitics and gain properties of the novel Ga(NAsP)/GaP material system for the integration to Si
Author(s): B. Kunert; K. Volz; W. Stolz
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Paper Abstract

The current status of the development of the novel dilute nitride Ga(NAsP)/GaP for the monolithic integration of optoelectronic functionality to Si is summarized from the concept, design and epitaxial optimization to the verification of direct energy gap and the realization of electrical injection laser devices at room temperature.

Paper Details

Date Published: 8 February 2007
PDF: 10 pages
Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648513 (8 February 2007); doi: 10.1117/12.714261
Show Author Affiliations
B. Kunert, Philipps-Univ. (Germany)
K. Volz, Philipps-Univ. (Germany)
W. Stolz, Philipps-Univ. (Germany)

Published in SPIE Proceedings Vol. 6485:
Novel In-Plane Semiconductor Lasers VI
Carmen Mermelstein; David P. Bour, Editor(s)

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