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Proceedings Paper

Morphological control of ZnO nanostructures grown on silicon
Author(s): R. T. Rajendra Kumar; J. Grabowska; J. P. Mosnier; M. O. Henry; E. McGlynn
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Paper Abstract

We report growth of ZnO nanostructures on Au-coated Si substrates using vapor phase transport in the temperature range from 800°C to 1150°C. Nanostructures grown at 800°C are rod-like with diameters of ~ 200 nm. Growth at higher temperature shows a more complex behaviour with 2-D structures connecting 1-D nanorods at intermediate temperatures and 3-D growth at the highest temperatures. Our work indicates that it may be possible to systematically control the growth mode and morphology of ZnO nanostructures by tuning the growth temperature.

Paper Details

Date Published: 20 February 2007
PDF: 5 pages
Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64741I (20 February 2007); doi: 10.1117/12.714026
Show Author Affiliations
R. T. Rajendra Kumar, Dublin City Univ. (Ireland)
J. Grabowska, Dublin City Univ. (Ireland)
J. P. Mosnier, Dublin City Univ. (Ireland)
M. O. Henry, Dublin City Univ. (Ireland)
E. McGlynn, Dublin City Univ. (Ireland)

Published in SPIE Proceedings Vol. 6474:
Zinc Oxide Materials and Devices II
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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