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Proceedings Paper

Changes in resist glass transition temperatures due to exposure
Author(s): Theodore H. Fedynyshyn; Indira Pottebaum; Alberto Cabral; Jeanette Roberts
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Paper Abstract

We have developed an AFM-based technique to measure intrinsic material roughness (IMR) after base development. Employing this technique we have deconstructed the resist into component parts and have shown that PAG is a major contributor to intrinsic material roughness. When PAG is exposed and thermal polymer deprotection is allowed to occur increased levels of IMR are present. The IMR of the resist is strongly dependent on the bake conditions, with increasing IMR at higher bake temperatures. This leads to the suspicion that the resist glass transition temperature (Tg) may be responsible for the changes in the level of IMR observed with both different PAGs, polymers and bake temperatures. We have measured the Tg in a series of model resists, both exposed and unexposed, and show the effect of changes in resist glass transition as a function of exposure dose and not the level of polymer deprotection. The Tg of the resists does not decrease with exposure or bake as may be expected, but instead is either unchanged or slightly increases. The change in Tg occurs due to exposure only with subsequent bake steps not affecting the resist Tg.

Paper Details

Date Published: 21 March 2007
PDF: 12 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651917 (21 March 2007); doi: 10.1117/12.713886
Show Author Affiliations
Theodore H. Fedynyshyn, MIT Lincoln Lab. (United States)
Indira Pottebaum, MIT Lincoln Lab. (United States)
Alberto Cabral, MIT Lincoln Lab. (United States)
Jeanette Roberts, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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