Share Email Print
cover

Proceedings Paper

Characterization of the tin-doped droplet laser plasma EUVL sources for HVM
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Tin-doped droplet target has been integrated with several lasers including high power high repetition rate lasers and demonstrated high conversion efficiencies for all the lasers. This implies the EUV source power is linearly increasing as the laser frequency goes higher. The target exhibit very low out-of-band radiation and debris emission. The drawback of increasing the repetition rate of the target and the laser will be limited. The total amount of tin consumed for a EUVL source system is also small enough to be operated for a long term without large effort for recycling of the target materials. We address and demonstrate in this paper the primary issues associated with long-term high power EUV sources for high volume manufacturing (HVM) using tin-doped droplet target.

Paper Details

Date Published: 21 March 2007
PDF: 9 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65173O (21 March 2007); doi: 10.1117/12.713461
Show Author Affiliations
Kazutoshi Takenoshita, College of Optics & Photonics/Univ. of Central Florida (United States)
Simi A. George, College of Optics & Photonics/Univ. of Central Florida (United States)
Tobias Schmid, College of Optics & Photonics/Univ. of Central Florida (United States)
Chiew-Seng Koay, College of Optics & Photonics/Univ. of Central Florida (United States)
Jose Cunado, College of Optics & Photonics/Univ. of Central Florida (United States)
Robert Bernath, College of Optics & Photonics/Univ. of Central Florida (United States)
Christopher Brown, College of Optics & Photonics/Univ. of Central Florida (United States)
Moza M. Al-Rabban, Qatar Univ. (Qatar)
William T. Silfvast, College of Optics & Photonics/Univ. of Central Florida (United States)
Martin C. Richardson, College of Optics & Photonics/Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

© SPIE. Terms of Use
Back to Top