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Proceedings Paper

Characterization of low-order aberrations in the SEMATECH Albany MET tool
Author(s): Patrick Naulleau; Justin Waterman; Kim Dean
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Paper Abstract

Previous papers have reported on print-based methods used to measure the aberrations in the SEMATECH Berkeley EUV microfield exposure tool (MET). The data showed that the tool has larger aberrations than those measured during interferometry (both visible and EUV) performed before the optic was integrated into the tool. The same analysis has been performed on the SEMATECH Albany MET to measure the low-order aberrations. As with the SEMATECH Berkeley tool, quantitative aberration measurements have revealed elevated levels of astigmatism and spherical error. Additionally, we find elevated levels of coma and field tilt and curvature.

Paper Details

Date Published: 21 March 2007
PDF: 9 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65172Q (21 March 2007); doi: 10.1117/12.713448
Show Author Affiliations
Patrick Naulleau, SUNY/Univ. at Albany (United States)
Lawrence Berkeley National Lab. (United States)
Justin Waterman, SUNY/Univ. at Albany (United States)
Kim Dean, SEMATECH (United States)

Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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