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Proceedings Paper

Accurate and reliable optical CD of MuGFET down to 10nm
Author(s): P. Leray; G. F. Lorusso; S. Cheng; N. Collaert; M. Jurczak; S. Shirke
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Paper Abstract

As device critical dimensions (CD) decrease, they approach the limits of standard metrology techniques and measuring features smaller than 20 nm represents a serious challenge. Within the framework of the 32 nm program at IMEC, a reliable and accurate approach to small feature metrology is required. We describe here a methodology aimed at measuring features down to 10nm by means of scatterometry. The results are compared to calibrated CDSEM measurements [1]. The active fins of a Multi Gate Field Effect Transistors (MuGFET) was measured across wafer and across batch. Scribe to cell correlation, wafer fingerprint, 3D profile, oxide thickness were also investigated. In particular, 3D profile information was compared to TEM. Our approach produced very consistent results for all measurement techniques (scatterometry, CDSEM and TEM) and it is now fully integrated in the IMEC production line to monitor the MuGFET platform.

Paper Details

Date Published: 5 April 2007
PDF: 10 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65183B (5 April 2007); doi: 10.1117/12.713324
Show Author Affiliations
P. Leray, IMEC (Belgium)
G. F. Lorusso, IMEC (Belgium)
S. Cheng, IMEC (Belgium)
N. Collaert, IMEC (Belgium)
M. Jurczak, IMEC (Belgium)
S. Shirke, VLSI Standard (United States)


Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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