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Proceedings Paper

The effect of localized mask density variations on image quality in EUV lithography
Author(s): Jinhong Park; Hwanseok Seo; Seong-Sue Kim; HanKu Cho; Joo-Tae Moon
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Paper Abstract

The impact of Stray Light (also sometimes called 'scattered light' or 'flare') in lithographic exposure tools is one of the key issues in EUV lithography to reduce its level to less than 10%. EUV mask can also be considered as one of the scattering sources because EUV mask used in memory and logic devices has various kinds of patterns with localized density variations, which are determined by patterned multilayer area. The most efficient way to decrease influences of stray light can be a combination of selective biasing and dummy implementation. In this paper, the effect of EUV mask density variations on image quality is investigated in terms of process window, such as LWR, depth of focus, resolution, etc., while mask density surrounding features is varied from dark field to bright field by implementing dummy patterns. As a result, allowable mask background density, which does not affect image quality of surrounding features and decreases effects of stray light, is suggested.

Paper Details

Date Published: 20 March 2007
PDF: 8 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651723 (20 March 2007); doi: 10.1117/12.713303
Show Author Affiliations
Jinhong Park, Samsung Electronics Co., Ltd. (South Korea)
Hwanseok Seo, Samsung Electronics Co., Ltd. (South Korea)
Seong-Sue Kim, Samsung Electronics Co., Ltd. (South Korea)
HanKu Cho, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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