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Proceedings Paper

Double exposure using 193-nm negative tone photoresist
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Paper Abstract

Double exposure is one of the promising methods for extending lithographic patterning into the low k1 regime. In this paper, we demonstrate double patterning of k1-effective=0.25 with improved process window using a negative resist. Negative resist (TOK N- series) in combination with a bright field mask is proven to provide a large process window in generating 1:3 = trench:line resist features. By incorporating two etch transfer steps into the hard mask material, frequency doubled patterns could be obtained.

Paper Details

Date Published: 26 March 2007
PDF: 8 pages
Proc. SPIE 6520, Optical Microlithography XX, 65202M (26 March 2007); doi: 10.1117/12.713209
Show Author Affiliations
Ryoung-han Kim, Advanced Micro Devices, Inc. (United States)
Tom Wallow, Advanced Micro Devices, Inc. (United States)
Jongwook Kye, Advanced Micro Devices, Inc. (United States)
Harry J. Levinson, Advanced Micro Devices, Inc. (United States)
Dave White, TOK America, Inc. (United States)


Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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