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Proceedings Paper

Molecular glass photoresists containing photoacid generator functionality: a route to a single-molecule photoresist
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Paper Abstract

A single molecule photoresist composed of tris(4-(tert-butoxycarbonyloxy)-3,5-dimethylphenyl) sulfonium hexafluoroantimonate (TAS-tBoc) was successfully synthesized and characterized. The synthesized triarylsulfonium was found to perform comparably to a commercial triphenylsulfonium triflate photoacid generator (PAG) when used purely as a PAG in blended molecular glass resist. TAS-tBoc formed excellent amorphous films when spin-coated out of solution. When exposed to 248 nm UV radiation, TAS-tBoc showed a sensitivity of 4 mJ/cm2 and a contrast ratio between 6 and 15, depending on development conditions. Its etch rate under standard silicon dioxide etch conditions was 0.87 as standardized to that of tBoc-PHOST in the same RIE plasma conditions. The outgassing level of the resist under EUV exposure was determined to be 1.08 x 1013 molecules/cm2, well below the maximum outgassing cutoff that is considered acceptable for EUV imaging. When imaged by e-beam, TAS-tBoc showed a relatively high dose-to-clear of 150 &mgr;C/cm2 as compared to conventional chemically amplified photoresists. Lines down to 50 nm wide with aspect ratios of 2.5:1 were imaged using e-beam. These lines exhibited an LER of only 3.96 nm, significantly better than the typical LER for polymeric chemically amplified resist, even when imaged using e-beam, and also one of the lowest values reported for molecular glass materials in general.

Paper Details

Date Published: 21 March 2007
PDF: 10 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65191N (21 March 2007); doi: 10.1117/12.712928
Show Author Affiliations
Richard A. Lawson, Georgia Institute of Technology (United States)
Cheng-Tsung Lee, Georgia Institute of Technology (United States)
Robert Whetsell, Georgia Institute of Technology (United States)
Wang Yueh, Intel Corp. (United States)
Jeanette Roberts, Intel Corp. (United States)
Laren Tolbert, Georgia Institute of Technology (United States)
Clifford L. Henderson, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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