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Proceedings Paper

A novel method for characterizing resist performance
Author(s): D. Van Steenwinckel; R. Gronheid; J. H. Lammers; A. M. Meyers; F. Van Roey; P. Willems
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Paper Abstract

In this paper, the use of a single Figure-of-Merit to judge resist performance with respect to line width roughness, resolution and sizing dose is proposed and evaluated. Chemically amplified photoresists used in advanced lithography nodes need to fulfill stringent requirements for a considerable number of resist and process characteristics. Along with resolution, line width roughness and resist sensitivity are important examples where the specifications have become very tight. Previously, it has been shown that resolution, line width roughness and resist sensitivity are fundamentally interdependent. Hence, when evaluating or optimizing resist performance it is very important to take these three characteristics into consideration simultaneously. We propose to combine these characteristics in a single photoresist Figure of Merit KLUP. This Figure of Merit, which is determined from sizing dose, imaging wavelength, exposure latitude, acid diffusion length, line width roughness and pitch allows for a direct comparison of very different resist formulations independent of the exposure tool used. Thus, KLUP has great potential to assist in evaluating resist performance for the next lithography nodes, for both ArF and for EUV wavelengths.

Paper Details

Date Published: 21 March 2007
PDF: 11 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65190V (21 March 2007); doi: 10.1117/12.712861
Show Author Affiliations
D. Van Steenwinckel, NXP Semiconductors (Belgium)
R. Gronheid, IMEC (Belgium)
J. H. Lammers, Philips Research Europe (Netherlands)
A. M. Meyers, IMEC (Belgium)
Intel Corp. (United States)
F. Van Roey, IMEC (Belgium)
P. Willems, IMEC (Belgium)


Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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