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Proceedings Paper

Thin bilayer resists for 193-nm and future photolithography II
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Paper Abstract

Bilayer, Si-containing resists are a technique of interest and a strong candidate to replace chemical vapor deposition (CVD) hardmask processes for small critical dimensions (CDs). Previously, we proposed a very thin film approach using bilayer resists for future lithography, defined the requirements for the resists, and demonstrated 55nm transferred patterns with high aspect ratios using 2-beam interferometer exposure. In this paper, we have demonstrated smaller-than- 60nm transferred patterns with a high numerical aperture (NA) scanner, as well as 45nm and 40nm transferred patterns with a 2-beam system using a 20% Si-containing thin bilayer resist. Immersion scanner exposure and a 35nm CD with 2- beam system were also studied.

Paper Details

Date Published: 23 March 2007
PDF: 12 pages
Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651935 (23 March 2007); doi: 10.1117/12.712737
Show Author Affiliations
Yoshi Hishiro, Micron Technology, Inc. (United States)
Michael Hyatt, Micron Technology, Inc. (United States)

Published in SPIE Proceedings Vol. 6519:
Advances in Resist Materials and Processing Technology XXIV
Qinghuang Lin, Editor(s)

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