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Proceedings Paper

Blossom overlay metrology implementation
Author(s): C. P. Ausschnitt; W. Chu; D. Kolor; J. Morillo; J. L. Morningstar; W. Muth; C. Thomison; R. J. Yerdon; L. A. Binns; P. Dasari; H. Fink; N. P. Smith; G. Ananew
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Paper Abstract

Improved overlay capability and sampling to control advanced lithography has accelerated the need for compact, multilayer/ mask/field/mark overlay metrology. The Blossom approach minimizes the size of the overlay marks associated with each layer while maximizing the density of marks within the overlay metrology tool's field of view (FOV). Here we describe our progress implementing this approach in 45nm manufacturing.

Paper Details

Date Published: 5 April 2007
PDF: 6 pages
Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65180G (5 April 2007); doi: 10.1117/12.712669
Show Author Affiliations
C. P. Ausschnitt, IBM (United States)
W. Chu, IBM (United States)
D. Kolor, IBM (United States)
J. Morillo, IBM (United States)
J. L. Morningstar, IBM (United States)
W. Muth, IBM (United States)
C. Thomison, IBM (United States)
R. J. Yerdon, IBM (United States)
L. A. Binns, Nanometrics, Inc. (United States)
P. Dasari, Nanometrics, Inc. (United States)
H. Fink, Nanometrics, Inc. (United States)
N. P. Smith, Nanometrics, Inc. (United States)
G. Ananew, Nanometrics, Inc. (United States)


Published in SPIE Proceedings Vol. 6518:
Metrology, Inspection, and Process Control for Microlithography XXI
Chas N. Archie, Editor(s)

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