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Proceedings Paper

Immersion defect reduction, part I: analysis of water leaks in an immersion scanner
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Paper Abstract

This paper reports the water-leakage mechanism of the immersion hood in an immersion scanner. The proposed static analysis reveals the immersion hood design performance in defect distribution. A dynamic water-leakage model traces the leaked water and identifies its position on the wafer, during exposure. Comparing simulation to experimental results on bare-silicon and resist-coated wafers, the defect type, source of residuals, and critical settings on the immersion system were clearly identified.

Paper Details

Date Published: 27 March 2007
PDF: 10 pages
Proc. SPIE 6520, Optical Microlithography XX, 65204U (27 March 2007); doi: 10.1117/12.712531
Show Author Affiliations
Fu-Jye Liang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Hsing Chang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Lin-Hung Shiu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chun-Kuang Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Li-Jui Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Tsai-Sheng Gau, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Burn J. Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 6520:
Optical Microlithography XX
Donis G. Flagello, Editor(s)

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